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ABES Institute of Technology, Ghaziabad: CO Statements 1

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0% found this document useful (0 votes)
22 views

ABES Institute of Technology, Ghaziabad: CO Statements 1

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wcqg7jtm2w
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Name: ………………………………… Admission No: ……………………….

Draw and explain the working of N-P-N transistor in common


b. Emitter configuration with its suitable characteristic graph. 2
ABES Institute of Technology, Ghaziabad
BEC 101: Fundamentals of Electronics Engineering Draw and explain the working of Center-Taped full wave
1st YEAR- All Branches c. 1
rectifier. Also calculate efficiency and ripple factor.
Test (ODD SEMESTER 2023-24) Explain unity gain amplifier. Determine the output voltage of
[Time: 3 Hours] [Total Marks: 70] the following network.
COURSE OUTCOMES
CO Statements
Understand the concept of KVL, KCL, and PN Junction to solve various
1
circuits. d. 3
Explain the characteristics of Bipolar Junction Transistors and Field Effect
2
transistors.
Illustrate op-amp as Adder, differentiator, integrator and Subtractor by
3
applying the Virtual Ground Concept.
4 Apply the concept of K-Map to minimize the expressions up to 6 variables.
Understand the concept of modulation and determine the expression for an Explain construction and operation of NPN BJT. Derive the
5
amplitude-modulated signal. relationship between current amplification factor for common
e. 2
emitter and common base configuration of bipolar junction
SECTION-A transistor.
Q.1 Attempt all Questions (2×7=14) CO
a. What do you mean by Varactor diode? Write its one application. 1
b. Why FET is a voltage-controlled device? 2 SECTION-C
c. Write down the characteristics of Ideal OP-AMP. 3
d. The output of OP-AMP increases 8V in 12μs.What is the slew rate? 3 Q.3 Attempt any one Question of the following (7 x 1= 7) CO
Derive relation between current gain in CB and CE configuration of Explain the construction, working and characteristics of N-
e. 2 a. 2
Transistor. channel depletion MOSFET.
f. Define modulation index for AM wave. 5 Explain the construction, working and characteristics of N-
b. 2
500W carrier is modulated to depth of 90%,calculate the total channel enhancement MOSFET.
g. 5
power in modulated wave.
Q.4 Attempt any one Question of the following (7 x 1= 7) CO
SECTION-B a. Determine and draw the output voltage of given network. 1
Q. C
Attempt any three Questions (7x3=21)
2 O
Define the various elements of communication system and draw
a. 5
its functional block diagram.
Draw the block diagram of op-amp and list all the ideal
b. 3
characteristics of op-amp.

Determine the range of input voltage (Vs) for the Zener diode to
remain in ON state shown in figure.

b. 1

Q.5 Attempt any one Question of the following (7 x 1= 7) CO


a. With the help of the circuit diagram, explain the working of OP- 3
AMP as a non-Inverting summer.
b. With the help of the circuit diagram, explain the working of OP- 3
AMP as an Integrator.

Q.6 Attempt any one Question of the following (7 x 1= 7) CO


An audio frequency signal 10Sin2π x 500t is used to amplitude
modulate a carrier of 50Sin 2π x 105t. Calculate:
(i) Modulation index
a. 5
(ii) Amplitude of Each side band
(iii) Total power delivered to the load of 2 KΩ.
(iv) Bandwidth
Derive the transmission efficiency and total power of amplitude
b. modulated wave assuming message and carrier wave as sinusoidal 5
wave.

Q.7 Attempt any one Question of the following (7 x 1= 7) CO


Explain Satellite and RADAR communication using suitable
a. 5
block diagram.

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