HCMUT – FEEE – Department of Electronic engineering

Isntructor: Hồ Trung Mỹ
Solid sate electronic devices (code: EE2411) – AY2021-S2 – Final Exam Review Questions

v 1. Optical Absorption
1) The longest wavelength that can be absorbed by silicon, which has the bandgap of 1.12 eV, is 1.1 μm. If the
longest wavelength that can be absorbed by another material is 0.87 μm, then bandgap of this material is
(A) 1.416 eV (B) 0.886 eV (C) 0.854 eV (D) 0.706 eV (E) None of the above

2) If E = hc/l is the energy of incident photon and Eg is the energy band gap of solid state material then optical
absorption will take place when
(A) 2E = Eg (B) E = 0 (C) E < Eg (D) E ³ Eg (E) None of the above

v 2. Luminescence
3) Luminescence is the phenomenon in which
(A) electrons are induced to drop down to energy states
(B) electrons are made free to accumulate at the surface
(C) electrons are excited to high energy levels by various methods of excitation and these drop to low energy
states by producing photons
(D) holes-electrons are neutralized.

4) A photovoltaic metal absorbs a photon of yellow light and immediately emits an ultraviolet photon. This is
called
(A) fluorescence. (B) electroluminescence. (C) phosphorescence. (D) photoluminescence

5) In LED, the process of emitting photons from a direct semiconductive material is called _________________.
(A) photoluminescence. (B) gallium arsenide. (C) electroluminescence. (D) gallium phosphide.

v 3. Direct and Indirect Recombination

6) The rate of direct recombination in a semiconducting material is determined by
(A) The majority carrier lifetime, which in turn is determined by the minority carrier concentration at thermal equilibrium.
(B) The majority carrier lifetime, which in turn is determined by the majority carrier concentration at thermal equilibrium.
(C) The minority carrier lifetime, which in turn is determined by the majority carrier concentration at thermal equilibrium.
(D) The minority carrier lifetime, which in turn is determined by the minority carrier concentration at thermal equilibrium.

7) GaAs is suitable for fabrication of light-emitting diodes because it is:

(A) An indirect band gap semiconductor (B) A direct band gap semiconductor
(C) A wide band gap semiconductor (D) None of the above

8) Si is not suitable for fabrication of light-emitting diodes because it is:

(A) An indirect band gap semiconductor (B) A direct band gap semiconductor
(C) A wide band gap semiconductor (D) None of the above

v 4. Photoconductive cell
9) Photoconductive effect means
(A) The decreased conductivity of an illuminated semiconductor junction
(B) The increased conductivity of an illuminated semiconductor junction
(C) The conversion of photonic energy to electromagnetic energy
(D) The conversion of an electromagnetic energy to photonic energy

10) A photoconductive cell is basically a _________________.

(A) light emitting diode (LED) (B) light dependent resistor (C) photodiode (D) photoelectric relay

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11) The resistance of an LDR __________ with increasing incident light intensity (assume that optical absorption
exists).
(A) increases (B) decreases (C) remains the same (D) becomes zero (E) None of the above

12) Which of the choices below is another name for a photoconductive cell?
(A) Varicap (B) Varistor (C) Photoresistive device (D) Photodiode

v 5. Diffusion of Carriers
13) In a semiconductor, diffusion electron current density is ___________.
(A) qDn(∂n/∂x) (B) qDn(∂p/∂x) (C) –qDp (∂p/∂x) (D) –qDp (∂n/∂x) (E) None of the above

14) In a semiconductor, J, Jp and Jn indicate total diffusion current density hole current density and electron
current density respectively, ∂n/∂x and ∂p/∂x are the electron and hole concentration gradient respectively in x-
direction and Dp and Dn are the hole and electron diffusion constants respectively. Which one of the following
equations is correct?
(A) Jn = –qDn(∂n/∂x) for electrons (B) Jp = –qDp(∂p/∂x) for holes
(C) J = –qDp (∂p/∂x) – qDn (∂n/∂x) (D) None of the above

15) The Einstein relationship between the diffusion constant Dn and mobility μn for electron is
(A) Dn/mn = 2kT/q (B) Dn/mn = q/kT (C) Dn/mn = kT/q (D) Dn/mn = kT – Eg

16) The carrier mobility in a semiconductor is found to be 0.4 m2/Vs. Its diffusion constant at 300 K will
be
(A) 0.43 m2/s (B) 0.16 m2/s (C) 0.04 m2/s (D) 0.01 m2/s (E) None of the above

17) Diffusion constant for electron is ________ to hole.

(A) Equal (B) Greater than (C) Lesser than (D) Can’t be determined

v 6. The Continuity Equation

18) The continuity equation shows changes in carrier concentrations due to generation, ______, drift and
diffusion.
(A) photon emission (B) recombination (C) breakdown (D) doping

19) What is the continuity equation in words?

(A) Rate of increase = (inflow – outflow) + drift – diffusion
(B) Rate of increase = (inflow + outflow)
(C) Rate of increase = (inflow – outflow)
(D) Rate of increase = (inflow – outflow) + generation – recombination
(E) Rate of increase = (outflow + inflow) + generation – recombination

v 7. Fabrication of p-n Junctions

20) Four major steps in a planr process: i) lithography, ii) metallization, iii) ion implanation or diffusion, and iv)
oxidation. Order of these steps is
(A) i, ii, iii and iv (B) ii, iii, i, and iv (C) iii, i, ii, and iv
(D) iv, i, iii, and ii (E) None of the above

21) The first step in a planar process of fabrication of p-n junctions is

(A) metallization (B) oxidation (C) lithography (D) ion implanation or diffusion (E) None of the above

22) The second step in a planar process of fabrication of p-n junctions is

(A) metallization (B) oxidation (C) lithography (D) ion implanation or diffusion (E) None of the above

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v 8. Equilibrium Conditions (We consider an abrupt pn junction)
23) Barrier potential in a P-N junction is caused by
(A) Thermally generated electrons and holes. (B) Flow of drift current.
(C) Migration of minority carriers across the junction. (D) Diffusion of majority carriers across the junction.

24) In a p-n junction, to make the depletion region extend prominently into p-region, the concentration of impurities
in the p-region must be
(A) Much less than the concentration of impurities in n-region
(B) Much higher than the concentration of impurities in n-region
(C) Equal to the concentration of impurities in n-region
(D) zero

25) In an unbiased p-n junction, the junction current at equilibrium is

(A) Due to diffusion of minority carriers only.
(B) Due to diffusion of majority carriers only
(C) Zero, because equal and opposite drift and diffusion currents for electrons and holes cross the junction
(D) Zero, because no charges cross the junction.

26) In a step pn+ junction, WP is ____________WP.

(A) less than (B) much less than (C) greater than (D) much greater than (E) equal to

27) There are ______________ existed in a space charge region of an unbiased p-n junction.
(A) electrons and holes (B) no electrons and holes (C) positive ions and electrons (D) no ions

28) In a step p+n junction, the square of the width of the depletion region is:
(A) Directly proportional to doping in N (B) Inversely proportional to doping in N
(C) Independent of doping in N (D) None of the above

29) The Fermi energy in p–n junction at thermal equilibrium is:

(A) Proportional to distance (B) Directly increases with the temperature
(C) Invariant with respect to distance (D) None of the above

>> Statement for the four next questions:

A Si pn junction with zero applied bias has doping concentrations of ND = 5 x 1015 cm–3 and NA = 2 x 1015 cm–3.
30) The ratio of WN/WP is
(A) 5 (B) 1/5 (C) 3/5 (D) 2/5 (E) None of the above

31) The built-in voltage is

(A) 0.843 V (B) 0.773 V (C) 0.721 V (D) 0.638 V (E) None of the above

32) The depletion region width W is

(A) 3.25 x 10–5cm (B) 4.57 x 10–5cm (C) 4.57 x 10–4cm (D) 3.25 x 10–4cm (E) None of the above

33) In depletion region, magnitude of maximum electric field Em is

(A) 3.16x104 V/cm (B) 2. 65x104 V/cm (C) 2.15x104 V/cm (D) 1.47x104 V/cm (E) None of the above

v 9. Forward-Biased abrupt pn Junction

34) The forward current through a semiconductor diode circuit is due to
(A) Minority carriers (B) Majority carriers (C) Holes (D) Electrons

35) The depletion width of pn junction _______ when the forward applied voltage increases.
(A) increases (B) decreases (C) remains the same (D) becomes zero (E) None of the above

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36) A silicon PN junction is forward biased with a constant current at room temperature. When the temperature is
increased, the forward bias voltage across the PN junction _______________.
(A) remains the same (B) increases (C) decreases (D) None of the above

37) When diode is in forward bias its depletion region gets

(A) larger (B) narrowed (C) positive charges (D) negative charges

v 10. Reverse-Biased abrupt pn Junction

38) The depletion width of pn junction _______ when the reverse applied voltage increases.
(A) increases (B) decreases (C) remains the same (D) becomes zero (E) None of the above

39) When diode is in forward bias its depletion region gets

(A) larger (B) narrowed (C) positive charges (D) negative charges

>> Statement for the three next questions:

An ideal one-sided silicon n+p junction has uniform doping on both sides of the abrupt junction. The doping relation
is ND = 50NA . The built-in potential barrier is Vbi = 0.75 V. The applied reverse bias voltage is VR = 10V.
40) The donor conentration ND is
(A) 1.95 x 1017cm–3 (B) 2.16 x 1017cm–3 (C) 1.54 x 1016cm–3 (D) 2.05 x1016cm–3 (E) None of the above

41) The width of the depletion layer under a reverse bias of 10V is
(A) 2.7 x 10–4cm (B) 2.3 x 10–4cm (C) 1.9 x 10–4cm (D) 1.5 x10–4cm (E) None of the above

42) The junction capacitance is

(A) 5.9 x 10–9F/cm2 (B) 5.5 x 10–9F/cm2 (C) 5.1 x 10–9F/cm2 (D) 4.7 x 10–9F/cm2 (E) None of the above

v 11. Reverse-Bias Breakdown

43) The maximum reverse voltage that can be applied before current surges is called
(A) Reverse recovery time (B) Maximum junction voltage
(C) Forward voltage (D) Reverse breakdown voltage

44) A Zener diode should have:

(A) Heavily doped p- and n-regions (B) Lightly doped p- and n-regions
(C) Narrow depletion region (D) Both (a) and (c)

45) In a Zener diode (with the tunnel breakdown mechanism)

(A) P & N regions are lightly doped (B) The depletion region is wide
(C) P & N regions are heavily doped (D) The junction field current is small

46) Zener breakdown results due to

(A) Strong electric field across the junction (B) Thermal decomposition
(C) Impact ionization (D) Emission of free electrons

47) Avalance breakdown results due to

(A) Strong electric field across the junction (B) Thermal decomposition
(C) Impact ionization (D) Emission of free electrons

48) Consider a voltage regulator diode in reverse breakdown region, breakdown voltage at temperature T1 is V1, at
T2 is V2. If T2 >T1 and |V1| > |V2|, the breakdown mechanism of this diode is ________________.
(A) thermal runaway (B) Zener breakdown (C) avalanche breakdown (D) punch throuh (E) None of the above

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v 12. Reverse Recovery Transient
49) The time taken by the diode to operate in the reversed condition from forward conduction.
(A) Maximum power time (B) Reverse recovery time (C) Lifetime (D) Allocated time

50) The time it takes to turn off a forward-biased diode is called the _________________.
(A) forward recovery time (B) recombination (C) reverse recovery time (D) turn-on time

51) Reverse recovery time of the diode is computed as the _______ of the storage time and trasition interval from
the forward to reverse bias.
(A) sum (B) product (C) quotient (D) difference

v 13. Large signal models for diode

>>Use the figures below to answer the two next questions.

Fig.13.1 Fig.13.2
52) A voltage regulator (Fig.13.1) with VS = 8.5 V, R = 20 W and Zener diode with VZ = 6V, IZmin = 5mA and IZmax
= 50mA. To keep VL unchanged (=VZ), RL must be in this range of :
(A) 40 W < RL < 70 W (B) 50 W < RL < 80 W (C) 60 W < RL < 90W
(D) 50 W < RL < 100W (E) None of the above

53) Given a circuit shown in Fig.13.2, V1 = 3V and V2 = 2V, we apply the constant voltage drop model (VON =
0.7V) for finding IX and VX
(A) IX =2.25mA và VX =3.7V (B) IX =2.45mA và VX =4.3V (C) IX = 2.65mA và VX =5.3V
(D) IX =2.85mA và VX =5.3V (E) None of the above

v 14. Capacitance of p-n junctions

54) Capacitive effects are exhibited by PN junctions when they are
(A) Forward biased (B) Reverse biased
(C) Either forward or reverse biased (D) Neither forward nor reverse biased

55) What is the type of capacitance effect exhibited by the PN junction, when it is reverse biased?
(A) Transition capacitance (B) Diffusion capacitance (C) Space charge capacitance (D) Drift capacitance

56) What is the type of capacitance effect exhibited by the PN junction when it is forward biased?
(A) Diffusion capacitance (B) Storage capacitance (C) Drift capacitance (D) Transition capacitance

57) Diffusion or storage capacitance is the term used to refer to

(A) the reverse bias capacitance of a diode (B) the forward bias capacitance of a diode
(C) the breakdown capacitance of a zener diode (D) the effective capacitance of a rectifier

58) The variable capacitance property possessed by the reverse biased PN junction is used to construct
a device known as
(A) Zener diode (B) Varicap (C) photodiode (D) Tunnel diode

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59) The sum of the resistance of the neutral p-region and the neutral n-region is called
(A) Junction resistance (B) Extrinsic resistance (C) Intrinsic resistance (D) Bulk resistance

60) The depletion capacitance, Cj of an abrupt p–n junction with constant doping on either side varies with reverse
bias, VR, as:
(A) Cj ~ VR3 (B) Cj ~ VR–2 (C) Cj ~ VR–1/2 (D) None of the above

61) Consider a varicap with an abrupt pn junction. Let VR be the applied reverse bias. If the junction capacitance
(Cj) is 1 pF for Vbi + VR = 1 V, then for Vbi + VR = 4 V, Cj will be
(A) 4 pF (B) 2 pF (C) 0.25 pF (D) 0.5 pF (E) None of the above

v 15. Some typical diodes

62) The normal operating region for a zener diode is the ____________.
(A) forward-bias region. (B) reverse-bias region. (C) zero-crossing region. (D) reverse-breakdown region.

63) Identify the false statement with respect to the Zener diode.
(A) Zener diode is needed for voltage regulation (B) Zener diode is operated in reverse biased condition
(C) Zener diode has similar characteristics to that of an ideal current source (D) None of the above

64) A Schottky diode has __________.

(A) Insulator-Semiconductor junction (B) Semiconductor-Semiconductor junction
(C) Metal-Metal junction (D) Metal - Semiconductor junction.

65) Schottky diodes are also known as __________.

(A) PIN diodes. (B) hot carrier diodes. (C) step-recovery diodes. (D) tunnel diodes.

66) The switching speed of a Schottky diode is __________.

(A) Lower than p-n junction diode (B) Same as p-n junction diode
(C) Higher than p-n junction diode (D) None of the above

67) The varactor diode is:

(A) Voltage-dependent resistance (B)Voltage-dependent capacitance
(C) Voltage-dependent inductor (D) None of the above

68) In a reverse-biased photodiode with increase in incident light intensity, the diode current __________.
(A) Increases (B) Remains constant (C) Decreases (D) None of the above

69) When a photodiode is reverse biased, and kept in a dark room, the current flowing through the device
corresponds to
(A) Zero current (B) Maximum current the device can hold
(C) Normal current that flows through the device (D) Reverse saturation current

70) A photodiode is used in reverse bias because

(A) Majority of electron-hole pairs swept are reversed across the junction
(B) Only one side is illuminated
(C) Reverse current is small compared to photocurrent
(D) Reverse current is large compared to photocurrent

71) A particular green LED emits light of wavelength 555nm. Eg of the semiconductor material is
(A) 2.23 eV (B) 1.95 eV (C) 1.14 eV (D) 0.70 eV (E) None of the above

72) The color emitted by an LED depends mainly on

(A) Type of material used (B) Type of biasing applied
(C) Recombination rate of charge carriers (D) Environmental conditions

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v 16. Introduction to FET
73) A MOSFET is sometimes called ____________.
(A) MESFET (B) JFET (C) IGFET (D) SCR (E) None of the above

74) A MOSFET is sometimes called ____________.

(A) MISFET (B) JFET (C) MESFET (D) SCR (E) None of the above

75) A MOSFET is sometimes called _____FET

(A) Open gate (B) Shorted gate (C) Metallic gate (D) Insulated gate

76) A ________ is considered a voltage controlled device

(A) FET (B) Diode (C) BJT (D) Capacitor

v 17. MOS capacitor

77) An N-EMOS will have a collection of holes under the gate oxide during
(A) accumulation (B) depletion (C) inversion (D) all of the above

78) An N-EMOS will have a collection of electrons under the gate oxide during
(A) accumulation (B) depletion (C) inversion (D) all of the above

79) A MOS capacitor of an N-EMOS is in the accumulation mode. The dominant charge in the channel is due to
the presence of
(A) holes (B) electrons (C) positively charged icons (D) negatively charged ions

80) Which of the following does not affect the threshold voltage of an MOSFET?
(A) Fermi potential (B) gate-semiconductor work function
(C) drain-to-source voltage (D) impurities implanted into the channel

81) The condition for MOS capacitor (N-EMOS) in depletion is

(A) VGS < VFB (B) VFB < VGS < VTN (C) VGS > VTN (D) VGS = 0 V (E) None of the above

v 18. Structure of MOSFET

82) For an N-EMOS, Source and Drain regions are made with ______.
(A) n-type semiconductor (B) p-type semiconductor (C) intrinsic semiconductor (D) Metal

83) For an N-EMOS, substrate (or body) region are made with ______.
(A) n-type semiconductor (B) p-type semiconductor (C) intrinsic semiconductor (D) Metal

v 19. N-EMOS – Formation of channel

84) For an N-EMOS, the region between Source and Drain regions is ________ region when VGS < VTN.
(A) depletion (B) inversion (C) breakdown (D) Ohmic (E) None of the above

85) For an N-EMOS, there is the ______ channel between Source and Drain when VGS > VTN.
(A) resistance (B) water (C) electron (D) hole (E) None of the above

86) In an N-EMOS, the polarity of the inversion layer is the same as that of the
(A) polarity of the gate electrode (B) minority carriers in the drain
(C) majority carries in the substrate (D) majority carries in the source

87) An N-EMOS is in saturation mode, if VDS increases then the effiective channel length ________.
(A) unchanges (B) increases (C) increases a half (D) decreases (E) None of the above

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88) A MOSFET is called short-channel MOSFET when its channel length L ______.
(A) > 1 mm (B) < 1 mm (C) = 1 mm (D) = 0.5 mm (E) None of the above

89) An N-EMOS is in saturation mode and VDS=const, if channel length L decreases then ID________.
(A) unchanges (B) increases (C) increases a half (D) decreases (E) None of the above

90) An N-EMOS is in saturation mode and VDS=const, if gate width W decreases then ID________.
(A) unchanges (B) increases (C) increases a half (D) decreases (E) None of the above

v 20. Drain current equations in N-EMOS

91) An N-EMOS with VTN of 2V, if they measure its terminals with following potentials (reference to ground
potential): VG = 5V, VS = 1V, and VD = 3V, then this MOSFET in ________ region.
(A) saturation (B) Cut-off (C) Triode (D) breakdown (E) None of the above

92) An N-EMOS with VTN of 1V, if they measure its terminals with following potentials (reference to ground
potential): VG = 4V, VS = 1V, and VD = 5V, then this MOSFET in ________ region.
(A) saturation (B) Cut-off (C) Triode (D) breakdown (E) None of the above

93) The drain of an N-EMOS is shorted to the gate so that VGS = VDS. This MOSFET has VTN of 1 V. If the drain
current (ID) is 1 mA for VGS = 2 V, then for VGS = 3 V, ID is ______.
(A) 2 mA (B) 3 mA (C) 9 mA (D) 4 mA (E) None of the above

94) For an N-EMOS in the saturation mode, the drain current ID

(A) Decreases with increases in VDS (B) Decreases with decrease in VDS
(C) Increases with increases in VGS (D) Increases with decrease in VGS

95) For an N-EMOS with a constant gate-source voltage (VGS > VTN), if the drain-source voltage is increased
(more positive) pinch-off would occur for:
(A) high values of drain current (B) saturation value of drain current
(C) zero drain current (D) gate current equal to drain current

96) For an N-EMOS in the pinch-off region as the drain voltage is increased the drain current ____________.
(A) becomes zero (B) abruptly decreases(C) abruptly increases (D) remains constant

>>Use the figures below to answer the four next questions.

VDD
RD

Fig.20.1 Fig.20.2 Fig.20.3

97) Given the circuit shown in the fig.20.1 where VDD=5V, VTN = 2.5V, mnCoxW/L = 0.5mA/V2, and RD =500W. The
operating point of this N-EMOS (IDQ , VDS )
(A) (2 mA, 4.5V) (B) (2mA, 3.8V) (C) (1mA, 4.05V) (D) (1mA, 4.50V) (E) None of the above

98) Given the circuit shown in the fig.20.2 where VDD=12V, R1=150KW, R2=50KW, RD=10KW, RS = 0, VTN =2V,
and mnCoxW/L = 2mA/V2 . This N-EMOS has the Q point (IDQ, VDSQ) of
(A) (1 mA, 2V) (B) (0.5mA, 4V) (C) (0.5mA, 5V) (D) (1mA, 3V) (E) None of the above
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99) Given the circuit shown in the fig.20.2 where VDD=12V, R1=150KW, R2=50KW, RD=10KW, RS=0, VTN =2V,
and mnCoxW/L = 2mA/V2. This N-EMOS has the transconductance gm of
(A) 0.001 S (B) 0.002 S (C) 0.003 S (D) 0.004 S (E) None of the above

100) Given the current mirror circuit shown in the fig.20.3 where 5(mnCox)M1 = 3(mnCox)M2; VTN,M1=VTN,M2 ;
lM1=lM2=0. If I2 = 2IR , then (W/L)M2/(W/L)M1 is
(A) 3/10 (B) 10/3 (C) 6/5 (D) 5/6 (E) None of the above

v 21. Operating regions of N-EMOS with VGS > VTN

101) For small values of drain to source voltage, N-EMOS behaves like a (assume VGS > VTN)
(A) Diode (B) Capacitor (C) Inverter (D) Resistor

102) An N-EMOS operates as a voltage controlled resistor, if (W/L)new = 2(W/L)old and VGS new = 4VGS old =
5VTN, then RDSnew/RDSold is _____.
(A) 1/64 (B) 1/32 (C) 1/16 (D) 1/8 (E) None of the above

103) An N-EMOS operates as an electronic switch, if MOSFET is in _______ region, then this switch is ON.
(A) triode (B) saturation (C) cut-off (D) brerakdown (E) 4 ĐS trên đều sai

v 22. Transfer and output characteristics of N-EMOS

104) When the drain current ID is plotted against the drain-source base voltage VDS at constant gate-source voltage
VGS, this curve is called ___________.
(A) output characteristic curve (B) input characteristic curve
(C) transfer characteristic curve (D) linear curve

105) When the drain current ID is plotted against the gate-source base voltage VGS at constant drain-source voltage
VDS, this curve is called ___________.
(A) output characteristic curve (B) input characteristic curve
(C) transfer characteristic curve (D) linear curve

106) On the output characteristic curve of an N-EMOS for VGS > VTN, the pinch-off voltage (VDSsat) is
(A) VGS + VTN (B) VGS – VTN (C) –VGS + VTN (D) –VGS – VTN (E) None of the above

v 23. Small signal model for N-EMOS in saturation

107) The drain current of N-EMOS in saturation is given by ID = K(VGS – VTN)2 where K is a constant.
The magnitude of the transconductance gm is ________.
(A) K(VGS – VTN)2/VDS (B) 2K(VGS – VTN) (C) ID/(VGS – VDS) (D) K(VGS – VTN)2/VGS

108) Consider an N-EMOS in saturation region, this MOSFET has following parameters: VTN = 1V, mnCoxW/L =
2mA/V2, VGS = 2 V and VA = 150V >> VDS. Its output resistance ro is
(A) 300 KW (B) 250 KW (C) 200 KW (D) 150 KW (E) None of the above

109) Given the circuit shown in the Fig.20.2 where VDD=5V, R1=150KW, R2=100KW, RD=1KW, RS = 0, VTN =1V,
and mnCoxW/L = 2mA/V2 . This N-EMOS has the Q point (IDQ, VDSQ) of
(A) (0.5mA, 3V) (B) (0.5mA, 3.5V) (C) (1mA, 4V) (D) (1mA, 4.5V) (E) None of the above

110) Given the circuit shown in the Fig.20.2 where VDD=5V, R1=150KW, R2=100KW, RD=1KW, RS = 0, VTN =1V,
and mnCoxW/L = 2mA/V2 . This N-EMOS has the transconductance gm of
(A) 0.005 S (B) 0.004 S (C) 0.003 S (D) 0.002 S (E) None of the above

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111) Given the circuit shown in the fig. 5 where VDD=5V, R1=150KW, R2=100KW, RD=1KW, RS = 0, VTN =1V,
mnCoxW/L = 2mA/V2, Cgs = 4pF and Cgd = 1pF. This N-EMOS has the unity gain cut-off frequency fT of
(A) 45.21 MHz (B) 54.78 MHz (C) 63.66 MHz (D) 72.53 MHz (E) None of the above

v 24. Non-ideal effects of N-EMOS (in saturation)

>>Statement for the three next questions:
We consider the output curves of an N-EMOS, shown in the fig. 3. The solid line represents the ideal N-EMOS.
Below we assume the applied gate voltage to be constant.

Fig.3
112) Which effect leads to curve A?
(A) Short-channel effect. (B) Narrow-channel effect. (C) Channel-length modulation. (D) None of the above

113) Which effect leads to curve B?

(A) Short-channel effect. (B) Narrow-channel effect. (C) Channel-length modulation. (D) None of the above

114) Which effect leads to curve C?

(A) Short-channel effect. (B) Narrow-channel effect. (C) Channel-length modulation. (D) None of the above

115) Consider an N-EMOS in saturation, if the temperature increases, then ID ________.

(A) decreases (B) decreases by (C) increases (D) increases a little (E) None of the above
half

v 25. Introduction to BJT

116) A BJT has
(A) One PN junction (B) Two PN junctions (C) Three PN junctions (D) Four PN junctions

117) For a typical transistor, which one of the following statements is correct?
(A) The current IB is approximately equal to the current IE.
(B) The current IB is approximately equal to the current IC.
(C) The current IC is approximately equal to the current IE.
(D) The sum of the current IC and IE is approximately equal to the current IB.

118) A _________ is considered a current controlled device.

(A) Diode (B) FET (C) BJT (D) Resistor

119) In a BJT the region that is very lightly doped and is very thin is
(A) Emitter (B) Base (C) Collector (D) None of these

120) Most of the electrons in the base of an NPN transistor flow:

(A) out of the base lead (B) into the collector (C) into the emitter (D) into the base supply

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121) In a BJT, collector current is controlled by:
(A) collector voltage (B) base current (C) collector resistance (D) all of the above

122) In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector doping in atoms/cm3,
respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following condition is
TRUE
(A) NE = NB = NC (B) NE >> NB and NE > NC (C) NE = NB and NB < NC (D) NE < NB < NC

123) The emitter of the transistor is generally doped the heaviest because it
(A) has to dissipate maximum power (B) has to supply the charge carriers
(C) is the first region of transistor (D) must possess low resistance

v 26. Operating modes of npn BJT

124) For a BJT under saturation condition.
(A) IC = βIB (B) IC > βIB (C) IC < βIB (D) IC is independent of all other parameters.

125) When the emitter junction JE is forward biased while the collector junction JC is reverse biased, the transistor
is at ________ region.
(A) cut-off (B) saturation (C) [forward] active (D) breakdown

126) A pnp BJT is biased with VCB = –2V and VCE = 12V. This BJT is in _______ region.
(A) cut-off (B) saturation (C) reverse active (D) forward active (E) None of the above

127) A pnp BJT is biased with VCB = –4.3V and VCE = –5V. This BJT is in _______ region.
(A) cut-off (B) saturation (C) reverse active (D) forward active (E) None of the above

128) If for a silicon npn BJT, the base-to-emitter voltage (VBE) is 0.7 V and the collector-to-base voltage (VCB) is
0.2 V, then the transistor is operating in the
(A) normal active mode (B) saturation mode (C) inverse active mode (D) cutoff mode

129) The most commonly used configuration of an npn BJT as a switch is

(A) Common collector (B) Common emitter (C) Common base (D) Both common base and common collector

>>Use the figures below to answer the two next questions.

Fig.26.1 Fig.26.2
130) For the circuit shown in Fig.26.1 where VCC = 4.8V, RE = 100W, RC = 2.7KW, R1 = 80KW, R2 = 20KW, and b
= 100. The Q-point (I CQ,VCEQ ) is (assume VBEQ = 0.7 V)
(A) (2.5mA, 1.7V) (B) (2mA, 1V) (C) (2mA, 2.5V) (D) (1 mA, 2V) (E) None of the above

131) For the circuit shown in Fig.26.2, the Q-point is VCEQ = 12 V and ICQ = 2 mA when b = 80. The values of
resistors RC and RB are (assume VBEQ = 0.7 V)

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 (A) 10 kW, 241 kW (B) 10 kW, 932 kW (C) 6 kW, 932 kW (D) 6 kW, 699 kW (E) None of the above

v 27. Parameters of BJT

132) The ratio of which two currents is represented by α?
(A) IC and IE (B) IC and IB (C) IE and IB (D) None of the above

133) The ratio of which two currents is represented by β?

(A) IC and IE (B) IC and IB (C) IE and IB (D) None of the above

134) The DC current gain (β) of a BJT is 50. Assuming that the emitter [injection] efficiency is 0.995, the base
transport factor is
(A) 0.980 (B) 0.985 (C) 0.990 (D) 0.995 (E) None of the above

135) The current gain of a transistor in common base mode is 0.995. The current gain of the
same transistor in common emitter mode is
(A) 197 (B) 201 (C) 197 (D) 199 (E) None of the above

136) If α and β are the current gains in the CB and CE configurations respectively of a BJT, then (β – α)/αβ =
(A) ¥ (B) 1 (C) 2 (D) 0.5 (E) None of the above

End of FE review questions

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